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corundum film concentration

Growth of corundum-structured In2O3 thin -

Cited by: 27

Electrical Conductive Corundum-Structured α-Ga2O3

Kazuaki Akaiwa, Shizuo Fujita

Study on corundum-structured p-type iridium oxide

Request PDF on ResearchGate On Nov 1, 2018, Shin-ichi Kan and others published Study on corundum-structured p-type iridium oxide thin films and band alignment at iridium oxide /gallium oxide

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Electrical Conductive Corundum-Structured alpha-Ga

Cited by: 69

Comparative Study of the Impact of Corundum Particle

Cited by: 3

Schottky barrier diodes of corundum-structured gallium

Cited by: 59

Indium(III) oxide - Wikipedia

  Chemical formula: In₂O₃

(PDF) Interface migration mechanism on

Reaction rims of magnesio-aluminate spinel were grown at the contacts between periclase and corundum at temperatures of 1250 °C to 1350 °C and under uniaxial load of 0.026 and 0.26 kN per 9 mm2

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RIR - Measurement and Use in Quantitative XRD

however, the concentration of a and s must be known exactly. The fact that the RIR, when properly measured, is a universal constant means that RIR values determined in one oratory can be used in any other oratory which chooses to meet the four requirements. If calibration and analytical data are

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Enhanced thermal stability of alpha gallium oxide films

Cited by: 12

Abrasive introduced in the optical processing-叶总文章-企

2013-8-23  叶总写文章: Abrasive introduced in the optical processing-In the optical processing of the coarse grinding stage, the abrasive is essential for processing accessories. Abrasive According to the source is divided into natural and man-made abrasive

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Growth of corundum-structured In2O3 thin films on

Abstract We report the fabrication of rhombohedral corundum-structured indium oxide (α-In 2 O 3) thin films, which can complete a semiconductor quaternary alloy system with α-Al 2 O 3 and α-Ga 2 O 3, on sapphire substrates with α-Fe 2 O 3 buffer layers. X-ray diffraction showed the formation of α-In 2 O 3, and the α-In 2 O 3 film exhibited n-type semiconductor properties with electron

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(PDF) Synthesis and doping of fine-crystalline

Equation (1a) can be written in the form The concentration of doping ions in corundum and c boehmite was determined by atomic emission spec ln { [ ln ( 1 α ) e ] } = k N t + c, troscopy with spectrum excitation in a direct current which makes it clear that, if c Table 2.

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Li-Assisted Low-Temperature Phase Transitions in

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US3370017A - Microcrystalline corundum powder,

US3370017A US29858063A US3370017A US 3370017 A US3370017 A US 3370017A US 29858063 A US29858063 A US 29858063A US 3370017 A US3370017 A US 3370017A Authority US United States Prior art keywords corundum alumina colloidal silica particles Prior art date 1963-07-30 Legal status (The legal status is an assumption and is not a legal conclusion.

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A Polar Corundum Oxide Displaying - PubMed

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Heat Seeker • UV Fluorescence as a Gemological Tool

2019-10-26  When the stone is heat treated, the rutile dissolves into the corundum by diffusion, but because diffusion is slow, the local concentration of Ti 4+ can be quite high. In the high concentration regions the Ti 4+ concentration will exceed the local charge compensators (Fe 2+ or Mg 2+) and thus free Ti 4+ ions will form.

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Synthetic Star Sapphires and Rubies Produced by

2019-10-22  Synthetic Star Sapphires and Rubies Produced by Wiede’s Carbidwerk, Freyung, Germany. Karl Schmetzer, H. Albert Gilg, and Heinz-Jürgen Bernhardt Again, the concentration of titanium oxide within the alumina powder used for crystal growth was stated to be in the range of 0.1 to 0.3 wt.% TiO 2.

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Structure and creep of mullite-corundum refractories

Conclusions. The magnitude of creep deformation of the mullite-corundum refractories significantly depends on the nature of distribution of the phase in the binder, the density of the binder, and on its interface (bond) strength with the chamotte grains.

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Electronic and ionic conductivity in metal oxides

2013-12-30  Electronic and ionic conductivity in metal oxides Kazimierz Conder Laboratory for Developments and Methods, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland [email protected] 2 Concentration of carriers increases! 3 Electrical resistivity of ceramic (oxide) materials

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Structure and creep of mullite-corundum refractories

Conclusions. The magnitude of creep deformation of the mullite-corundum refractories significantly depends on the nature of distribution of the phase in the binder, the density of the binder, and on its interface (bond) strength with the chamotte grains.

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Electronic and ionic conductivity in metal oxides

2013-12-30  Electronic and ionic conductivity in metal oxides Kazimierz Conder Laboratory for Developments and Methods, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland [email protected] 2 Concentration of carriers increases! 3 Electrical resistivity of ceramic (oxide) materials

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Non-equilibrium Solute Capture in Passivating Oxide Films

2018-2-22  for passive film formed electrochemically) shows that there is very significant chromium and traces of molybdenum in the rocksalt oxide. This indicates that the chromium and molybdenum are located as substitutional . Ignoring for atoms simplicity the low molybdenum concentration,

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Corundum - WikiVisually

Corundum is a crystalline form of aluminium oxide typically containing traces of iron, titanium, vanadium and chromium. It is a rock-forming mineral. It is also a naturally transparent material, but can have different colors depending on the presence of transition metal impurities in its

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Aluminum Oxide Al2O3 Material Properties

2016-7-29  Aluminum Oxide, Al 2 O 3 Ceramic Properties. Alumina is one of the most cost effective and widely used material in the family of engineering ceramics. The raw materials from which this high performance technical grade ceramic is made are readily availe and reasonably pd, resulting in good value for the cost in fabricated alumina shapes.

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Observation of superconductivity in structure-selected

As shown in Fig. 1b, the Raman modes observed in the Ti 2 O 3-LT film are consistent with the D 34 point-group symmetry of the corundum structure (Supplementary Figure S4). 39 On the other hand

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Recent Ceramics International Articles - Elsevier

2019-10-29  CiteScore: 3.50 ℹ CiteScore: 2018: 3.500 CiteScore measures the average citations received per document published in this title. CiteScore values are based on citation counts in a given year (e.g. 2015) to documents published in three previous calendar years (e.g. 2012 14), divided by the number of documents in these three previous years (e.g. 2012 14).

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Measurement of iron self-diffusion in hematite single

2019-10-11  The thickness of the film was about 10 nm as shown by figures 1 a and b. Diffusion Experiments and Depth Profiling The samples with the 57 Fe film were submitted to the diffusion annealings at 951 o, 1000 o, 1052 o, and 1100 o C for diffusion perpendicular to c-axis, and at 900 o, 1000 o, and 1100 o C for diffusion parallel to c-axis.

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Room temperature magnetically ordered polar corundum

2017-1-3  bulk12 and thin film materials13. However, the identification of other materials families where the two ground states may co-exist at ambient temperature is less developed. By using the connection between the polar LiNbO 3 structure and perovskite, we identified polar derivatives of corundum as a new class of ternary oxide AFeO 3

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Zhenping Wu - Google Scholar Citations

Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films Z Wu, G Bai, Q Hu, D Guo, C Sun, L Ji, M Lei, L Li, P

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